Optimal Doping Profiles in Semiconductor Design

Autori

  • Concetta Drago
  • René Pinnau

DOI:

https://doi.org/10.1685/

Parole chiave:

optimal semiconductor design, energy transport, doping profile, adjoints, numerics, descent algorithm

Abstract

This paper deals with the optimal design of doping profiles in a semiconductor device, based on the energy transport model. The objective is to slightly change the doping profile in order to get a gain in the outflow current. After introducing the optimal control approach in the framework of the mathematical theory for the control of systems governed by partial differential equations, some preliminary numerical results are shown for the n+ − n − n+ ballistic diode. [DOI: 10.1685/CSC06071] About DOI

Dowloads

Pubblicato

2007-10-01

Fascicolo

V. 1 (2006)

Sezione

Articles

Licenza

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