Optimal Doping Profiles in Semiconductor Design

Autores/as

  • Concetta Drago
  • René Pinnau

DOI:

https://doi.org/10.1685/

Palabras clave:

optimal semiconductor design, energy transport, doping profile, adjoints, numerics, descent algorithm

Resumen

This paper deals with the optimal design of doping profiles in a semiconductor device, based on the energy transport model. The objective is to slightly change the doping profile in order to get a gain in the outflow current. After introducing the optimal control approach in the framework of the mathematical theory for the control of systems governed by partial differential equations, some preliminary numerical results are shown for the n+ − n − n+ ballistic diode. [DOI: 10.1685/CSC06071] About DOI

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Publicado

2007-10-01

Número

Vol. 1 (2006)

Sección

Articles

Licencia

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