Free-Flight Time Generation in Direct Simulation Monte Carlo for Carrier Transport in Semiconductors

Autores/as

  • Vincenza Di Stefano Department of Mathematics and Computer Science, University of Catania

DOI:

https://doi.org/10.1685/

Palabras clave:

Submicron Silicon semiconductor devices, Direct Monte Carlo Simulation, free flight

Resumen

This paper deals with the Direct Simulation Monte Carlo for carrier transport in submicron semiconductor devices. Different methods for the generation of the scattering times, called Constant-Time technique (CTT) and Self-Scattering technique (SST), are presented and compared, in order to analyze their efficiency and precision. One dimensional steady-state simulations of a $n^+ - n - n^+$ silicon diode have been carried out. For this particular device, SST seems to be more efficient than CTT. [DOI: 10.1685/CSC09223] About DOI

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Publicado

2009-08-12

Número

Vol. 3 (2009)

Sección

Articles

Licencia

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