Free-Flight Time Generation in Direct Simulation Monte Carlo for Carrier Transport in Semiconductors

Authors

  • Vincenza Di Stefano Department of Mathematics and Computer Science, University of Catania

DOI:

https://doi.org/10.1685/

Keywords:

Submicron Silicon semiconductor devices, Direct Monte Carlo Simulation, free flight

Abstract

This paper deals with the Direct Simulation Monte Carlo for carrier transport in submicron semiconductor devices. Different methods for the generation of the scattering times, called Constant-Time technique (CTT) and Self-Scattering technique (SST), are presented and compared, in order to analyze their efficiency and precision. One dimensional steady-state simulations of a $n^+ - n - n^+$ silicon diode have been carried out. For this particular device, SST seems to be more efficient than CTT. [DOI: 10.1685/CSC09223] About DOI

Downloads

Published

2009-08-12

Issue

Vol. 3 (2009)

Section

Articles

License

Authors who submit to this journal agree to the following terms: a) Authors retain copyright over their work, while allowing the SIMAI to place this accepted work under a Creative Commons Attribution License (CC license), which allows others to freely access, use, and share the work, with an acknowledgement of the work's authorship. b) Authors are able to waive the terms of the CC license and enter into separate, additional contractual arrangements for the non-exclusive distribution and subsequent publication of this work (e.g., publish a revised version in a journal, post it to an institutional repository or publish it in a book). with an acknowledgement of its initial publication on “Communications to SIMAI Congress”. c) In addition, authors are encouraged to post and share their work online (e.g., in institutional repositories or on their website).