Free-Flight Time Generation in Direct Simulation Monte Carlo for Carrier Transport in Semiconductors

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  • Vincenza Di Stefano Department of Mathematics and Computer Science, University of Catania

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https://doi.org/10.1685/

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Submicron Silicon semiconductor devices##common.commaListSeparator## Direct Monte Carlo Simulation##common.commaListSeparator## free flight

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This paper deals with the Direct Simulation Monte Carlo for carrier transport in submicron semiconductor devices. Different methods for the generation of the scattering times, called Constant-Time technique (CTT) and Self-Scattering technique (SST), are presented and compared, in order to analyze their efficiency and precision. One dimensional steady-state simulations of a $n^+ - n - n^+$ silicon diode have been carried out. For this particular device, SST seems to be more efficient than CTT. [DOI: 10.1685/CSC09223] About DOI

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2009-08-12

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##issue.vol## 3 (2009)

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Articles

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