Hole Mobilities in the Silicon Semiconductor: the Case of Warped Band

Auteurs-es

  • Salvatore La Rosa
  • Vittorio Romano

DOI :

https://doi.org/10.1685/

Résumé

The maximum entropy principle is used to get a consistent hydrodynamical model for the transport of holes in semiconductors and then from this an asymptotic energy-transport and drift-diffusion models are derived. The valence bands are described with warped functions. An explicit formula for the low field mobility is deduced. [DOI: 10.1685 / CSC06173] About DOI

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Publié

2008-03-31

Numéro

Vol. 2 (2007)

Rubrique

Articles

Licence

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