Approximate Solutions to the Quantum Drift-Diffusion Model of Semiconductors in the Presence of External Barrier Potential

Autores/as

  • V. Romano
  • R. Tracinà

DOI:

https://doi.org/10.1685/

Resumen

Approximate solutions to the quantum drift-diffusion model for semiconductors are found by including also an external potential modeling interior quantum barriers. The system is written as singularly perturbed equations which are solved up to first order in the scaled reduced Planck constant. [DOI: 10.1685 / CSC06172] About DOI

Descargas

Publicado

2007-10-01

Número

Vol. 2 (2007)

Sección

Articles

Licencia

Authors who submit to this journal agree to the following terms: a) Authors retain copyright over their work, while allowing the SIMAI to place this accepted work under a Creative Commons Attribution License (CC license), which allows others to freely access, use, and share the work, with an acknowledgement of the work's authorship. b) Authors are able to waive the terms of the CC license and enter into separate, additional contractual arrangements for the non-exclusive distribution and subsequent publication of this work (e.g., publish a revised version in a journal, post it to an institutional repository or publish it in a book). with an acknowledgement of its initial publication on “Communications to SIMAI Congress”. c) In addition, authors are encouraged to post and share their work online (e.g., in institutional repositories or on their website).