Hydrodynamic modeling of electron transport in gated silicon nanowires transistors

Autori

DOI:

https://doi.org/10.1478/AAPP.97S1A18

Parole chiave:

Nanowires, Semiconductors, Boltzmann equation

Abstract

We present a theoretical study of the low-field electron mobility in rectangular gated silicon nanowire transistors at 300 K based on a hydrodynamic model and the self-consistent solution of the Schrödinger and Poisson equations. The hydrodynamic model has been formulated by taking the moments of the multisubband Boltzmann equation, and closed on the basis of the Maximum Entropy Principle. It includes scattering of electrons with acoustic and non-polar optical phonons and surface roughness scattering.

Biografie autore

  • Orazio Muscato, Università degli Studi di Catania
    Dipartimento di Matematica e Informatica, Associate Professor viale Andrea Doria 6, 95125 Catania
  • Tina Castiglione, Università degli Studi di Catania
    Dipartimento di Matematica e Informatica, Post Doc viale Andrea Doria 6, 95125 Catania
  • Armando Coco, Oxford Brookes University
    Department of Mechanical Engineering and Mathematical Sciences, Lecturer Wheatley campus, OX33 1HX Oxford GB

Dowloads

Pubblicato

2019-05-20

Fascicolo

Vol 97, SUPPL NO 1 (2019): Thermocon 2016

Sezione

THERMOCON 2016 (Conference Proceedings)

Licenza

Creative Commons License
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