Weak discontinuity waves in n-type semiconductors with defects of dislocation

Authors

  • Maria Paola Mazzeo Università degli Studi di Messina Dipartimento di Scienze Matematiche e Informatiche, Scienze Fisiche e Scienze della Terra Viale F.S. D’Alcontres, 31, 98166 Messina, Italy
  • Liliana Restuccia Università degli Studi di Messina Dipartimento di Scienze Matematiche e Informatiche, Scienze Fisiche e Scienze della Terra Viale F.S. D’Alcontres, 31, 98166 Messina, Italy

DOI:

https://doi.org/10.1478/AAPP.97S2A8

Abstract

In this paper the propagation of weak discontinuities is investi- gated in an isotropic, homogenous and elastic n-type semiconductor with defects of dislocation. To this aim we introduce a new varia- ble related to the surface across which the solutions or/and some of their derivatives undergo a jump. Following a Boillat’s methodology for quasi-linear and hyperbolic systems of the first order, we obtain Bernoulli’s equation governing the propagation of weak discontinuities.

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Published

2019-12-20

Issue

Vol 97, SUPPL NO 2 (2019): NACS 2017

Section

NACS 2017 (Conference Proceedings)

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